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Freescale Semiconductor Technical Data
Document Number: MRF7S38010H Rev. 0, 8/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. * Typical WiMAX Performance: VDD = 30 Volts, IDQ = 160 mA, Pout = 2 Watts Avg., f = 3400 - 3600 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15 dB Drain Efficiency -- 17% Device Output Signal PAR -- 8.5 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset -- - 49 dBc in 0.5 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 10 Watts CW Peak Tuned Output Power * Pout @ 1 dB Compression Point w 10 Watts CW Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF7S38010HR3 MRF7S38010HSR3
3400 - 3600 MHz, 2 W AVG., 30 V WiMAX LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465I - 02, STYLE 1 NI - 400 - 240 MRF7S38010HR3
CASE 465J - 02, STYLE 1 NI - 400S - 240 MRF7S38010HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDS VGS VDD Tstg TC TJ
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 10 W CW Case Temperature 77C, 2 W CW Symbol RJC Value (2,3) 2.05 2.24 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S38010HR3 MRF7S38010HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 33.5 Adc) Gate Quiescent Voltage (VDD = 30 Vdc, ID = 160 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 335 mAdc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.13 68.5 50.6 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.1 2 2.7 0.21 2.7 3.5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 160 mA, Pout = 2 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 0.5 MHz Channel Bandwidth @ 5.25 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) Gps D PAR ACPR IRL 13 15 8 -- -- 15 17 8.5 - 49 - 12 17 30 -- - 46 -6 dB % dB dBc dB
MRF7S38010HR3 MRF7S38010HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 160 mA, Pout = 2 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. Mask System Type G @ Pout = 2 W Avg. Mask Point B at 3.5 MHz Offset Point C at 5 MHz Offset Point D at 7.4 MHz Offset Point E at 14 MHz Offset Point F at 17.5 MHz Offset RCE EVM -- -- -- -- -- -- -- - 26 - 38 - 43 - 60 - 60 - 33 2.3 -- -- -- -- -- -- -- dB % rms dBc
Relative Constellation Error @ Pout = 2 W Avg. (1) Error Vector Magnitude (Typical EVM Performance @ Pout = 2 W Avg. with OFDM 802.16d Signal Call)
(1)
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 160 mA, 3400 - 3600 MHz Bandwidth Video Bandwidth @ 12 W PEP Pout where IM3 = - 30 dBc VBW (Tone Spacing from 100 kHz to VBW) -- 20 -- IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 200 MHz Bandwidth @ Pout = 2 W Avg. Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 10 W CW Average Group Delay @ Pout = 10 W CW, f = 3500 MHz Part - to - Part Insertion Phase Variation @ Pout = 10 W CW, f = 3500 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) 1. RLE = 20Log(EVM/100) GF Delay G P1dB -- -- -- -- -- -- 1.04 2.22 1.88 25.9 0.025 0.246 -- -- -- -- -- --
MHz
dB ns dB/C dBm/C
MRF7S38010HR3 MRF7S38010HSR3 RF Device Data Freescale Semiconductor 3
B1 VBIAS + C5 C3 Z8 Z7 RF INPUT Z1 C1 Z9 Z10 Z11 Z12 Z13 Z14 Z15 + C4 C6 + C7
VSUPPLY
Z16
Z17
Z18 C2
Z19
RF OUTPUT
Z2
Z3
Z4
Z5
Z6
DUT
Z1, Z19 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.750 x 0.084 Microstrip 0.596 x 0.084 Microstrip 0.288 x 0.110 Microstrip 0.450 x 0.084 Microstrip 0.067 x 0.367 Microstrip 0.083 x 0.307 Microstrip 0.830 x 0.058 Microstrip 0.567 x 0.128 Microstrip 0.116 x 0.367 Microstrip 0.064 x 0.307 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 PCB
0.032 x 0.166 Microstrip 0.124 x 0.538 Microstrip 0.099 x 0.341 Microstrip 0.220 x 0.166 Microstrip 0.063 x 0.240 Microstrip 0.085 x 0.340 Microstrip 0.037 x 0.340 x 0.257 Taper 0.637 x 0.084 Microstrip CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF7S38010HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S38010HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1 C2 C3, C4 C5, C6, C7 Description 95 , 100 MHz Long Ferrite Bead, Surface Mount 2.2 pF Chip Capacitor 2.7 pF Chip Capacitor 0.8 pF Chip Capacitors 22 F, 35 V Tantalum Capacitors Part Number 2743021447 ATC100B2R2JT500XT ATC100B2R7BT500XT ATC100B0R8BT500XT T491X226K035AT Manufacturer Fair - Rite ATC ATC ATC Kemet
MRF7S38010HR3 MRF7S38010HSR3 4 RF Device Data Freescale Semiconductor
C5
B1 C4
C3 C6 C7
C1 CUT OUT AREA
C2
MRF7S38010H/HS Rev. 1
Figure 2. MRF7S38010HR3(HSR3) Test Circuit Component Layout
MRF7S38010HR3 MRF7S38010HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
17 16.5 16 Gps, POWER GAIN (dB) 15.5 15 14.5 14 13.5 13 12.5 12 3400 3425 3450 3475 IRL 3500 3525 3550 3575 ACPR-U ACPR -L Gps D 20 19 18 D, DRAIN EFFICIENCY (%) 0 ACPR (dBc) -5 -10 -15 -20 -25 D, DRAIN EFFICIENCY (%) 0 ACPR (dBc) -5 -10 -15 -20 -25 240 mA -40 200 mA 160 mA -50 1 10 Pout, OUTPUT POWER (WATTS) PEP 50 1 10 Pout, OUTPUT POWER (WATTS) PEP 50 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB)
17 VDD = 30 Vdc, Pout = 2 W (Avg.), IDQ = 160 mA 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel 16 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% -49 Probability on CCDF -50 -51 -52 -53 -54 3600
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ Pout = 2 Watts Avg.
17 16.5 16 Gps, POWER GAIN (dB) 15.5 15 14.5 14 13.5 13 12.5 12 3400 3425 3450 3475 3500 3525 IRL 3550 3575 D Gps VDD = 30 Vdc, Pout = 4 W (Avg.), IDQ = 160 mA 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF ACPR-U ACPR -L 26 25 24 23 22 -40 -41 -42 -43 -44 -45 3600
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout = 4 Watts Avg.
19 18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 10 VDD = 30 Vdc, IDQ = 160 mA f1 = 3495 MHz, f2 = 3505 MHz Two -Tone Measurements, 10 MHz Tone Spacing 80 mA 120 mA 160 mA 200 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 240 mA -10 VDD = 30 Vdc, IDQ = 160 mA f1 = 3495 MHz, f2 = 3505 MHz Two -Tone Measurements, 10 MHz Tone Spacing -20 IDQ = 80 mA -30 120 mA
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S38010HR3 MRF7S38010HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) VDD = 30 Vdc, IDQ = 160 mA f1 = 3495 MHz, f2 = 3505 MHz Two -Tone Measurements, 10 MHz Tone Spacing IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 3rd Order -40 -50 -60 -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 50 5th Order 7th Order -10 -20 -30 IM3 -U -40 -50 -60 -70 1 10 TWO -TONE SPACING (MHz) 100 IM5 -U IM5 -L IM7 -U IM7 -L IM3 -L VDD = 30 Vdc, Pout = 12 W (PEP), IDQ = 160 mA Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 3500 MHz
Figure 7. Intermodulation Distortion Products versus Output Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 45 40 35 30 25 20 15 10 5 0 1 ACPR Gps
Figure 8. Intermodulation Distortion Products versus Tone Spacing
-15 -20 85_C 85_C -30_C TC = -30_C 85_C 25_C -50 -55 -60 10 20 25_C -25 -30 -35 -40 -45 ACPR (dBc)
VDD = 30 Vdc, IDQ = 160 mA f = 3500 MHz, 802.16d, 64 QAM 3/4 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF D
-30_C
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 9. WiMAX, ACPR, Power Gain and Drain Efficiency versus Output Power
19 18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 1 D VDD = 30 Vdc IDQ = 160 mA f = 3500 MHz 10 Pout, OUTPUT POWER (WATTS) CW 30 Gps 25_C 50 -30_C 25_C 85_C 40 35 30 25 20 15 0 45 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17 16 15 14 13 32 V 12 VDD = 28 V 11 0 5 10 15 20 25 Pout, OUTPUT POWER (WATTS) CW 30 V IDQ = 160 mA f = 3500 MHz
TC = -30_C
85_C
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF7S38010HR3 MRF7S38010HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
109
108 MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 30 Vdc, Pout = 2 W Avg., and D = 17%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 12. MTTF versus Junction Temperature
WIMAX TEST SIGNAL
100 10 Input Signal PROBABILITY (%) 1 0.1 (dB) 0.01 0.001 0.0001 0 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Compressed Output Signal @ 2 W Avg. Pout
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100 Point D -110 -9 -7.2 -5.4 Point B Point C
7 MHz Channel BW System Type G
Point B Point C Point D
PEAK -TO-AVERAGE (dB)
Figure 13. OFDM 802.16d Test Signal
-3.6 -1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications
MRF7S38010HR3 MRF7S38010HSR3 8 RF Device Data Freescale Semiconductor
Zo = 50
f = 3400 MHz
Zload
f = 3600 MHz
Zsource
f = 3400 MHz f = 3600 MHz
VDD = 30 Vdc, IDQ = 160 mA, Pout = 2 W Avg. f MHz 3400 3425 3450 3475 3500 3525 3550 3575 3600 Zsource W 31.79 - j0.13 32.46 - j3.62 32.58 - j6.82 32.29 - j9.43 31.32 - j11.63 30.03 - j13.46 28.76 - j15.19 27.24 - j16.25 25.51 - j17.02 Zload W 13.92 - j11.33 14.61 - j11.40 15.53 - j11.36 16.44 - j11.28 17.25 - j11.07 18.11 - j10.64 18.96 - j10.22 19.60 - j9.68 20.17 - j8.99
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S38010HR3 MRF7S38010HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
MRF7S38010HR3 MRF7S38010HSR3 10 RF Device Data Freescale Semiconductor
MRF7S38010HR3 MRF7S38010HSR3 RF Device Data Freescale Semiconductor 11
MRF7S38010HR3 MRF7S38010HSR3 12 RF Device Data Freescale Semiconductor
MRF7S38010HR3 MRF7S38010HSR3 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Aug. 2007 * Initial Release of Data Sheet Description
MRF7S38010HR3 MRF7S38010HSR3 14 RF Device Data Freescale Semiconductor
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MRF7S38010HR3 MRF7S38010HSR3
Document Number: RF Device Data MRF7S38010H Rev. 0, 8/2007 Freescale Semiconductor
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